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2SJ633-VB Product details
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### 2SJ633-VB MOSFET Product Overview
**Introduction: **
2SJ633-VB is a P-Channel MOSFET designed by VBsemi, suitable for various applications requiring high-efficiency power management. Using Trench technology, it has low on-resistance and high current carrying capacity, making it an ideal choice for applications with high performance requirements.
**Features:**
- **Drain-Source Voltage (VDS):** -60V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -1.7V
- **On-Resistance (RDS(ON)):** 100mΩ @ VGS = 4.5V, 90mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -30A
- **Technology:** Channel
- **Package:** TO252
- **Configuration:** Single P-Channel
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed Specifications
1. **Electrical Characteristics:**
- **Maximum Drain-Source Voltage (VDS):** -60V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** -1.7V
- **On-Resistance (RDS(ON)):**
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Continuous Drain Current (ID):** -30A
2. **Thermal and Mechanical Characteristics:**
- **Package Type:** TO252
- **Junction-to-Ambient Thermal Resistance:** Thermal resistance of standard TO252 package
- **Maximum Junction Temperature (Tj):** Specified by manufacturer
3. **Performance Characteristics:**
- **Technology:** Channel
- **Gate Charge (Qg): **Typical value based on VGS and ID
- **Input Capacitance (Ciss): **Typical value for high frequency operation
Domain and module applications：
### Application Examples
1. **Power Management:**
2SJ633-VB is ideal for power management systems in consumer electronics. Its high current carrying capacity and low on-resistance make it suitable for DC-DC converters, providing efficient power regulation and minimizing energy loss.
2. **LED Lighting:**
In LED lighting applications, 2SJ633-VB can be used to drive LED lights. Its high current carrying capacity and low on-resistance ensure stable brightness and high efficiency of LED lights.
3. **Medical Equipment:**
Due to its high current carrying capacity and stable performance, 2SJ633-VB can be used for power management and drivers in medical equipment, ensuring the reliability and safety of the equipment.
4. **Battery Management:**
2SJ633-VB can be used for charge and discharge control in battery management systems. Its high current carrying capacity and low on-resistance help improve the efficiency and performance of battery systems.
In summary, VBsemi's 2SJ633-VB MOSFET is a versatile and high-performance component suitable for a wide range of applications, including power management, LED lighting, medical equipment and battery management systems. Its advanced channel technology and robust specifications make it an ideal choice for harsh environments.
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