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2SJ610-TL-E-VB Product details
Back to previous pageProduct introduction：
### 1. 2SJ610-TL-E-VB Product Introduction
VBsemi's 2SJ610-TL-E-VB is a high-voltage single P-channel MOSFET manufactured using advanced Trench technology. The device is packaged in a TO-252 package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a drain-source voltage (VDS) of -250V and a gate-source voltage (VGS) of ±20V, ensuring reliability and stability in high-voltage environments.
VBsemi's 2SJ610-TL-E-VB is a high-voltage single P-channel MOSFET manufactured using advanced Trench technology. The device is packaged in a TO-252 package and has high drain-source voltage and current handling capabilities, making it suitable for power management and switching applications that need to withstand high voltages and currents. Its features include a drain-source voltage (VDS) of -250V and a gate-source voltage (VGS) of ±20V, ensuring reliability and stability in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -250V | -2V | -6A | 1200mΩ | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### 2. Detailed parameter description of 2SJ610-TL-E-VB
- **Model**: 2SJ610-TL-E-VB
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 1200mΩ @ VGS=4.5V
- 1000mΩ @ VGS=10V
- **Drain current (ID)**: -6A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
1. **Power switch module**: Due to its high drain-source voltage and low on-resistance, 2SJ610-TL-E-VB is widely used in power switch modules. These modules play a key role in power management systems, such as switching power supplies and inverters.
2. **Lighting system**: This MOSFET is also suitable for lighting systems that need to withstand high voltage. It can be used as a switching element in LED drivers to adjust the brightness and working mode of LED lights.
3. **Electric vehicle charging pile**: In electric vehicle charging piles, high-voltage and high-current switching devices are required to control the charging current and ensure safety. The characteristics of 2SJ610-TL-E-VB make it an ideal choice for such applications.
In summary, 2SJ610-TL-E-VB is suitable for various power management and switching applications that need to withstand high voltage and current. Its high performance and reliability make it have important application prospects in the fields of industry, automobile and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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