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2SJ607-Z-VB Product details
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### Product Introduction
**Model: 2SJ607-Z-VB**
2SJ607-Z-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-263 package. This product has the characteristics of high current capability and low on-resistance, suitable for applications requiring high efficiency and low power consumption. It adopts advanced Trench technology to ensure stable performance under high current and high voltage conditions.
**Model: 2SJ607-Z-VB**
2SJ607-Z-VB is a single P-channel metal oxide semiconductor field effect transistor (MOSFET) in TO-263 package. This product has the characteristics of high current capability and low on-resistance, suitable for applications requiring high efficiency and low power consumption. It adopts advanced Trench technology to ensure stable performance under high current and high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | 8.5mΩ | 6.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -3V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-263
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -3V
- **On-resistance (RDS(ON)):**
- 8.5mΩ @ VGS=4.5V
- 6.5mΩ @ VGS=10V
- **Drain current (ID):** -110A
- **Technology:** Trench
Domain and module applications：
### Application fields and module examples
**1. Electric vehicles: **
2SJ607-Z-VB performs well in the power management modules of electric vehicles and is suitable for battery management systems (BMS) and motor drive controllers. Its high current capability and low on-resistance can effectively reduce energy loss and improve system efficiency and reliability.
**2. Data center power management: **
In the power management modules of data centers, this MOSFET can be used in DC-DC converters and load switch applications. Its low RDS(ON) and high current capability can ensure low losses during power conversion, meeting the needs of data centers for high efficiency and stability.
**3. Industrial automation equipment: **
2SJ607-Z-VB is suitable for motor control modules in industrial automation equipment. Its high current handling capability and high voltage resistance enable it to operate reliably in harsh industrial environments, improving the overall performance and life of the equipment.
**4. Renewable Energy Systems: **
This model is widely used in solar inverters and wind energy conversion systems. Its low on-resistance and high efficiency help improve energy conversion efficiency, reduce heat loss, extend system operation time, and reduce maintenance costs.
The above application examples demonstrate the wide applicability of 2SJ607-Z-VB MOSFET in a variety of scenarios requiring high performance and high efficiency, highlighting its important position in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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