VBP16R26S Product details
Product introduction:
VBP16R26S is a single N-channel MOSFET model produced by VBsemi. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 26A. Manufactured using SJ_Multi-EPI technology and packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 30(±V) | 3.5V | 26A | 115(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 115
- Drain current (ID): 26A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Power electronic converter: VBP16R26S is suitable for various power electronic converters, such as variable frequency air conditioners, electric vehicle drive systems, etc., to achieve efficient power conversion and control.
2. Industrial power supply equipment: Due to its high voltage and current characteristics, this device can be used in switching power supplies, power regulators and other modules in industrial power supply equipment for stable power supply.
3. Solar inverter: As a key component in the solar inverter, VBP16R26S can convert the DC power output from the solar panel into AC power for powering homes and commercial purposes.
4. Electric vehicle charging piles: This type of MOSFET is suitable for power switching circuits in electric vehicle charging piles to control charging current and ensure charging safety.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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