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VBP16R25SFD Product details
Back to previous pageProduct introduction：
Product introduction:
VBP16R25SFD is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO247.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 30（±V） | 3.5V | 25A | 110(mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (mΩ) at 10V gate voltage: 110(mΩ)
- Maximum drain current (ID): 25A
- Technology: SJ_Multi-EPI
Domain and module applications：
Application example:
- High-frequency power modules: Since VBP16R25SFD has a high drain-source voltage and large drain current, it is suitable for high-frequency power modules such as switching power supplies and inverters.
- Electric vehicle drives: The device's high voltage and high current characteristics make it ideal for power switches and inverters in electric vehicle drives.
- Industrial electronics: In industrial electronic equipment, the VBP16R25SFD can be used to drive high-power motors and perform other high-power applications.
- Solar inverter: Due to its high performance and voltage resistance characteristics, this device can be used in solar inverters to convert DC power generated by solar panels into AC power.
Technical support：
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