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2SJ599-Z-E2-AZ-VB Product details
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### 2SJ599-Z-E2-AZ-VB MOSFET Product Introduction
**Product Description: **
2SJ599-Z-E2-AZ-VB is a single-channel P-type MOSFET designed for medium-power electronic applications. The MOSFET is packaged in TO-252 and has good conduction characteristics and medium power carrying capacity. The trench technology is used to ensure reliability and stability in harsh environments.
**Product Description: **
2SJ599-Z-E2-AZ-VB is a single-channel P-type MOSFET designed for medium-power electronic applications. The MOSFET is packaged in TO-252 and has good conduction characteristics and medium power carrying capacity. The trench technology is used to ensure reliability and stability in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | 58mΩ | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single channel P-type
- **Drain-source voltage (VDS):** -60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 58mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID):** -35A
- **Technology:** Trench
Domain and module applications：
### Application Examples
**1. Power amplifier: **
2SJ599-Z-E2-AZ-VB MOSFET can be used in various medium-power power amplifiers, such as audio amplifiers and power amplifiers. Its moderate on-resistance and current carrying capacity make it an ideal choice for medium-power audio systems.
**2. Electric vehicles: **
In the power system of electric vehicles, this MOSFET can be used in motor drivers and battery management systems to provide medium-power power output and battery protection functions.
**3. Industrial control: **
In the field of industrial control, this MOSFET can be used in power management and control circuits of various medium-power electronic devices to ensure stable operation and reliability of the system.
**4. LED lighting: **
In medium-power LED lighting systems, 2SJ599-Z-E2-AZ-VB can be used in LED drivers and lighting control circuits to ensure efficient operation and stability of LED lamps.
The above examples demonstrate the wide range of applications of the 2SJ599-Z-E2-AZ-VB MOSFET in various fields, highlighting its importance and versatility in medium power electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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