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2SJ599-Z-E1-AZ-VB Product details
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### 2SJ599-Z-E1-AZ-VB MOSFET Product Introduction
#### Product Overview
2SJ599-Z-E1-AZ-VB is a high performance P-Channel MOSFET in TO252 package. Designed with trench technology, it has low on-resistance and high reliability, suitable for medium power applications.
#### Product Overview
2SJ599-Z-E1-AZ-VB is a high performance P-Channel MOSFET in TO252 package. Designed with trench technology, it has low on-resistance and high reliability, suitable for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | 58mΩ | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
#### Detailed parameters
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 58 mΩ @ VGS = 4.5V
- 46 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -35A
- **Technology**: Trench
Domain and module applications：
### Application Examples
#### Power Management Systems
2SJ599-Z-E1-AZ-VB excels in medium-power power management systems for DC-DC converters, regulators, and load switches. Its low on-resistance and high current handling capability ensure efficient power transmission and conversion, improving the power management efficiency of the device.
#### Battery Protection
In circuits where battery protection is required, this MOSFET can be used for control and protection circuits. Its high reliability and high efficiency help ensure safe operation of the battery under various operating conditions.
#### Automotive Electronics
This MOSFET is suitable for automotive electronic systems such as battery management systems for electric vehicles and automotive lighting systems. Its high reliability and high efficiency help achieve better power utilization and system stability.
#### Industrial Control
In the field of industrial control, 2SJ599-Z-E1-AZ-VB can be used for control and switching circuits. Its high current handling capability and low on-resistance ensure stable operation in harsh industrial environments such as motor control and power amplifiers.
### Summary
2SJ599-Z-E1-AZ-VB P-Channel MOSFET features low on-resistance, high reliability and trench technology, making it suitable for medium power applications in power management, battery protection, automotive electronics and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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