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VBP16R20SFD Product details

Product introduction:

Product introduction:
VBP16R20SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. Manufactured using SJ_Multi-EPI technology and packaged as TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 30(±V) 3.5V 20A 175(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 175
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI

Domain and module applications:

Examples of applicable fields and modules:
1. Power switch module: VBP16R20SFD is suitable for various power switch modules, such as power switch circuits, inverters, etc., for stable power output and control.
2. Industrial automation equipment: Due to its high voltage and high current characteristics, this type of MOSFET can be used for current control, switching and regulation functions in industrial automation equipment.
3. Power tool driver: In power tools, VBP16R20SFD can be used as a power switching device in the driver to control the start, stop and speed adjustment of the motor.
4. Automotive electronic systems: As a key component in automotive electronic systems, this type of MOSFET can be used in on-board charging piles, electric vehicle controllers and other modules for power transmission and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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