Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC75-3 |
Single-P-Channel |
-20V |
|
-0.8V |
-0.4A |
|
540mΩ |
450mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC75-3 |
Single-P-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC75-3 |
Single-P-Channel |
-20V |
|
-0.8V |
-0.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC75-3 |
Single-P-Channel |
-20V |
|
-0.8V |
-0.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC75-3 |
Single-P-Channel |
|
|
|
|
|
|
|
#### Detailed parameters
- **Package**: SC75-3
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -20V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -0.8V
- **On-Resistance (RDS(ON))**:
- 540 mΩ @ VGS = 4.5V
- 450 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -0.4A
- **Technology**: Trench
Domain and module applications：
### Application Examples
#### Low Power Circuits
2SJ559-VB is suitable for low power circuits such as power management and switching circuits in mobile devices and portable electronics. Its low on-resistance and low power characteristics enable it to provide high efficiency management in battery-powered devices.
#### Sensor Interface
In sensor interface circuits, this MOSFET can be used for signal conditioning and switch control. Its low on-resistance and high reliability help improve the performance and stability of sensor systems.
#### Power Converters
2SJ559-VB can be used for switching and regulation circuits in low power power converters. Its high reliability and high efficiency ensure the stability and efficiency of power transmission and conversion.
#### Analog Circuits
In analog circuits that require low power processing, this MOSFET can be used for control and regulation circuits. Its low power characteristics help improve the accuracy and stability of analog signal processing.
### Summary
2SJ559-VB P-Channel MOSFET features low on-resistance, high reliability and trench technology, making it suitable for applications in low power circuits, sensor interfaces, power converters and analog circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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