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2SJ555-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ555-VB**
2SJ555-VB is a single P-channel MOSFET in TO3P package with high performance and reliability. It adopts trench technology, combining the characteristics of higher on-current and lower on-resistance, suitable for various high-power applications.
**Model: 2SJ555-VB**
2SJ555-VB is a single P-channel MOSFET in TO3P package with high performance and reliability. It adopts trench technology, combining the characteristics of higher on-current and lower on-resistance, suitable for various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-P-Channel | -60V | -1.7V | -53A | 20mΩ | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P-Channel | -60V | -1.7V | -53A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-P-Channel | -60V | -1.7V | -53A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO3P
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Drain Current (ID)**: -53A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ555-VB MOSFET has a wide range of applications in high-power fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for high-power switching power supplies, inverters, and motor drives. It can effectively handle high power and provide efficient power conversion and distribution.
2. **Automotive Electronics**: In automotive electronic systems, MOSFETs need to be able to withstand the high voltage and high temperature environment of automotive electrical systems. The characteristics of 2SJ555-VB make it suitable for automotive electric vehicle controllers, battery management systems, and motor drives.
3. **Industrial High-Frequency Electronics**: Due to its low on-resistance and high on-current characteristics, 2SJ555-VB can be used in industrial high-frequency electronic equipment such as high-frequency inverters, induction heating equipment, and welding equipment to provide efficient power conversion and control.
4. **Solar Inverter**: In solar inverter, 2SJ555-VB MOSFET can be used to convert DC power generated by solar panels into AC power to supply home or industrial power.
By combining high on-current, low on-resistance and trench technology, 2SJ555-VB MOSFET is ideal for high power applications. Its reliability and performance make it widely used in many fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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