中文
English
2SJ506STR-VB Product details
Back to previous pageProduct introduction：
### 2SJ506STR-VB MOSFET Product Introduction
**Product Description: **
2SJ506STR-VB is a single-channel P-type MOSFET designed for efficient energy management. The MOSFET is packaged in TO-252 and has good conduction characteristics and moderate current carrying capacity. The trench technology is used to ensure reliability and stability in various application environments.
**Product Description: **
2SJ506STR-VB is a single-channel P-type MOSFET designed for efficient energy management. The MOSFET is packaged in TO-252 and has good conduction characteristics and moderate current carrying capacity. The trench technology is used to ensure reliability and stability in various application environments.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single channel P type
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID):** -38A
- **Technology:** Trench
Domain and module applications：
### Application Examples
**1. Power Management: **
2SJ506STR-VB MOSFET can be used in various power management applications such as computer power supplies, portable devices and home appliances. Its moderate on-resistance and current capability make it an ideal choice in power management circuits.
**2. DC-DC Converter: **
This MOSFET can be used in the switching and control circuits of DC-DC converters to ensure efficient power conversion and stable output.
**3. Battery Protection: **
In portable devices and power tools, 2SJ506STR-VB can be used in battery protection circuits to provide effective battery management and protection to extend the service life of the equipment.
**4. Automotive Electronics: **
In automotive electronic systems, this MOSFET can be used in the power management and control circuits of on-board electronic equipment to ensure stable operation and reliability of the system.
These examples demonstrate the wide range of applications of the 2SJ506STR-VB MOSFET in various fields, highlighting its importance and versatility in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
