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2SJ506L-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ506L-VB**
2SJ506L-VB is a single P-channel MOSFET in TO251 package with high performance and reliability. It adopts trench technology, combining the characteristics of higher on-current and lower on-resistance, suitable for various medium power applications.
**Model: 2SJ506L-VB**
2SJ506L-VB is a single P-channel MOSFET in TO251 package with high performance and reliability. It adopts trench technology, combining the characteristics of higher on-current and lower on-resistance, suitable for various medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | 72mΩ | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO251
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 72mΩ @ VGS = 4.5V
- 56mΩ @ VGS = 10V
- **Drain Current (ID)**: -20A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ506L-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for switching power supplies, DC-DC converters, and battery management systems. It can effectively handle medium power and provide efficient power conversion and distribution.
2. **Consumer Electronics**: In consumer electronic devices that require medium power management, such as smartphones, tablets, and portable power supplies, 2SJ506L-VB MOSFET can provide stable and efficient power management and protection.
3. **Communication Equipment**: In communication equipment such as routers, switches, and base station power supplies, the high efficiency and reliability of 2SJ506L-VB help ensure stable operation of the equipment under high loads.
4. **Industrial Automation**: In industrial control and automation equipment that requires medium power, 2SJ506L-VB MOSFET can be used in various drive circuits such as servo drives, control systems, and factory automation equipment to improve system performance and reliability.
By combining high on-current, lower on-resistance, and trench technology, 2SJ506L-VB MOSFET is an ideal choice for medium power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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