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VBP16R11S Product details
Back to previous pageProduct introduction：
Product introduction:
VBsemi's VBP16R11S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO247 and is suitable for a variety of application scenarios.
VBsemi's VBP16R11S is a single N-channel field effect transistor (MOSFET) manufactured using SJ_Multi-EPI technology. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO247 and is suitable for a variety of application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 30（±V） | 3.5V | 11A | 380 (mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 380
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 380
- Drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Power electronics module: VBP16R11S is suitable for power switching modules in the field of power electronics, such as inverters, frequency converters and switching power supplies, to achieve high-efficiency energy conversion.
2. Electric vehicle driver: In the power inverter and driver of electric vehicles, this MOSFET can be used to control the motor and battery charging system of electric vehicles to provide efficient power output.
3. Solar inverter: Due to its high voltage and current capabilities, VBP16R11S can be used in power switching circuits in solar inverters to achieve conversion and stable output of solar energy.
4. High-frequency inverter: In industrial control systems and variable frequency drives, this device can be used in the power switch module of high-frequency inverters to achieve efficient power conversion and precise frequency control.
These areas and modules are just some examples of where the VBP16R11S may be suitable, actual applications depend on specific circuit design and requirements.
1. Power electronics module: VBP16R11S is suitable for power switching modules in the field of power electronics, such as inverters, frequency converters and switching power supplies, to achieve high-efficiency energy conversion.
2. Electric vehicle driver: In the power inverter and driver of electric vehicles, this MOSFET can be used to control the motor and battery charging system of electric vehicles to provide efficient power output.
3. Solar inverter: Due to its high voltage and current capabilities, VBP16R11S can be used in power switching circuits in solar inverters to achieve conversion and stable output of solar energy.
4. High-frequency inverter: In industrial control systems and variable frequency drives, this device can be used in the power switch module of high-frequency inverters to achieve efficient power conversion and precise frequency control.
These areas and modules are just some examples of where the VBP16R11S may be suitable, actual applications depend on specific circuit design and requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
