Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
1.7V |
50A |
|
28mΩ |
24mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
60V |
|
1.7V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
#### Detailed parameters
- **Package**: TO220
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.7V
- **On-Resistance (RDS(ON))**:
- 28 mΩ @ VGS = 4.5V
- 24 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: 50A
- **Technology**: Trench
Domain and module applications:
### Application Examples
#### Power Supply Units
The 2SJ478-VB MOSFET is suitable for high-power power supply units, especially where high-power switching is required. Its high drain-source voltage and low on-resistance make it efficient and stable in power conversion, providing a stable power supply for various electronic devices.
#### Motor Drive Circuits
In motor drive circuits, this MOSFET can be used to control high-power motors. Its high drain-source voltage and current handling capabilities enable precise control of motor speed and direction, suitable for industrial machinery, electric vehicles and aerospace applications.
#### High-Power LED Lighting Systems
For lighting systems that require high-power LEDs, the 2SJ478-VB can be used for switching and dimming applications. Its high current handling capability and low on-resistance ensure efficient energy management in LED drivers, providing reliable and long-lasting lighting solutions for large commercial buildings and stage lighting.
#### Hi-Fi Audio Systems
In Hi-Fi audio systems, this MOSFET can be used for high power amplification. Its low on-resistance and high current handling capability ensure high fidelity audio output with minimal distortion, making it ideal for professional audio equipment and performance venues.
### Summary
The 2SJ478-VB N-Channel MOSFET features high power capability, trench technology and high performance specifications, making it suitable for a wide range of applications from power supply units and motor drive circuits to high power LED lighting systems and Hi-Fi audio systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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