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2SJ477-01MR_06-VB Product details
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### Product Introduction
**Model: 2SJ477-01MR_06-VB**
2SJ477-01MR_06-VB is a single P-channel MOSFET in TO220F package with high performance and reliability. It adopts trench technology, combining high on-current and low on-resistance, suitable for medium power applications.
**Model: 2SJ477-01MR_06-VB**
2SJ477-01MR_06-VB is a single P-channel MOSFET in TO220F package with high performance and reliability. It adopts trench technology, combining high on-current and low on-resistance, suitable for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | 60mΩ | 50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO220F
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Drain Current (ID)**: -30A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ477-01MR_06-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for medium-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle medium power and provide efficient power conversion and distribution.
2. **Automotive Electronics**: In automotive electronic systems, MOSFETs need to be able to withstand the high voltage and high temperature environment of the automotive electrical system. The characteristics of 2SJ477-01MR_06-VB make it suitable for applications such as automotive ignition systems, battery management, power conversion, and drive control.
3. **LED lighting**: Due to its low on-resistance and high on-current characteristics, the 2SJ477-01MR_06-VB can be used in medium-power LED drivers and lighting control systems to provide stable power and efficient energy conversion.
4. **Industrial control systems**: In industrial control systems that require medium power, the 2SJ477-01MR_06-VB MOSFET can be used in various circuits such as inverters, robot control systems, and factory automation equipment to improve system performance and stability.
By combining high on-current, low on-resistance, and trench technology, the 2SJ477-01MR_06-VB MOSFET is an ideal choice for medium-power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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