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2SJ466-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ466-VB**
2SJ466-VB is a single P-channel MOSFET in TO263 package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for high power applications.
**Model: 2SJ466-VB**
2SJ466-VB is a single P-channel MOSFET in TO263 package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -30V | -2.5V | -75A | 11mΩ | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO263
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Drain Current (ID)**: -75A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ466-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for high-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle high power and provide efficient power conversion and distribution.
2. **Motor Drive and Control System**: In applications that require high-power motor drive and control, the high on-current and low conduction loss of 2SJ466-VB MOSFET can improve the efficiency and performance of the system. This is of great significance in areas such as electric vehicles, industrial machinery, and robots.
3. **Power Electronics**: In power electronic systems that require high power, 2SJ466-VB can be used in high-power circuits such as power factor correction circuits, inverters, and frequency converters to improve the efficiency and stability of the system.
4. **Servers and Data Centers**: In power management and power control systems in servers and data centers, the high power characteristics of 2SJ466-VB make it an ideal choice for high-performance computing and data processing.
By combining high on-current, low on-resistance and trench technology, 2SJ466-VB MOSFET is an ideal choice for high-power applications. Its reliability and performance make it widely used in multiple fields and modules.
2SJ466-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for high-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle high power and provide efficient power conversion and distribution.
2. **Motor Drive and Control System**: In applications that require high-power motor drive and control, the high on-current and low conduction loss of 2SJ466-VB MOSFET can improve the efficiency and performance of the system. This is of great significance in areas such as electric vehicles, industrial machinery, and robots.
3. **Power Electronics**: In power electronic systems that require high power, 2SJ466-VB can be used in high-power circuits such as power factor correction circuits, inverters, and frequency converters to improve the efficiency and stability of the system.
4. **Servers and Data Centers**: In power management and power control systems in servers and data centers, the high power characteristics of 2SJ466-VB make it an ideal choice for high-performance computing and data processing.
By combining high on-current, low on-resistance and trench technology, 2SJ466-VB MOSFET is an ideal choice for high-power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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