VBP16R10 Product details
Product introduction:
VBP16R10 is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 10A. Manufactured using Plannar technology and packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 30(±V) | 3.5V | 10A | 1000 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 1000
- Drain current (ID): 10A
- Technology: Plannar
Domain and module applications:
1. Power switch: VBP16R10 can be used as various types of power switches, including switching power supplies, battery management systems and DC-DC converters, and is widely used in industrial, automotive and consumer electronics fields.
2. Electric vehicle charger: As a power switching device in an electric vehicle charger, the MOSFET can be used to control the power conversion and regulation in the charger to achieve efficient and stable electric vehicle charging functions.
3. Solar inverter: VBP16R10 is suitable for inverter modules in solar power generation systems, used to convert solar power into AC power, providing reliable energy conversion functions for home and commercial solar systems.
4. Industrial automation equipment: used in motor drive and control modules in industrial automation equipment to achieve precise motion control and efficient energy conversion, improving equipment performance and production efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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