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2SJ387S-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SJ387S-VB is a single-channel P-type MOSFET produced by VBsemi, using TO252 package. The device has low on-resistance and high drain current handling capability, suitable for general power management and switching applications.
2SJ387S-VB is a single-channel P-type MOSFET produced by VBsemi, using TO252 package. The device has low on-resistance and high drain current handling capability, suitable for general power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -20V | -0.8V | -40A | 25mΩ | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -20V | -0.8V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -20V | -0.8V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Model**: 2SJ387S-VB
- **Package**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 2.5V
- 16mΩ @ VGS = 4.5V
- **Drain current (ID)**: -40A
- **Technology**: Trench (trench technology)
Domain and module applications：
### Applications and Module Examples
1. **Power Management Module**
- 2SJ387S-VB can be used as a switching element in a power management module for applications that require higher drain current and low conduction loss.
2. **Battery Protection Circuit**
- In a battery protection circuit, this MOSFET can be used as a switching element to control the charging and discharging process to protect the battery and the device.
3. **Motor Drive**
- In some motor drives that require high power, 2SJ387S-VB can be used as a switch to help control the start, stop and speed of the motor.
4. **Automotive Electronics**
- The device is suitable for automotive electronics such as automotive electronic control units (ECUs) and power management modules, and can withstand the harsh conditions in the automotive environment.
Although the drain current of 2SJ387S-VB is relatively high, its reliability and stability in general power management and switching applications make it one of the common components in many electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
