中文
English
2SJ387L-VB Product details
Back to previous pageProduct introduction：
### 2SJ387L-VB MOSFET Product Introduction
#### Product Overview
2SJ387L-VB is a P-Channel MOSFET suitable for medium power applications. It adopts TO251 package and uses trench technology design, with high efficiency and stable performance. It is suitable for a variety of applications that require medium power switching and amplification functions.
#### Product Overview
2SJ387L-VB is a P-Channel MOSFET suitable for medium power applications. It adopts TO251 package and uses trench technology design, with high efficiency and stable performance. It is suitable for a variety of applications that require medium power switching and amplification functions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | 72mΩ | 56mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -30V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel |
#### Detailed parameters
- **Package**: TO251
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 72 mΩ @ VGS = 4.5V
- 56 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -20A
- **Technology**: Trench
Domain and module applications：
### Application Examples
#### Power Management Modules
The 2SJ387L-VB MOSFET is suitable for medium-power power management applications such as DC-DC converters and power supply units. Its high voltage tolerance and low on-resistance ensure efficient power conversion, providing stable power for various electronic devices.
#### Motor Drive Circuits
In motor drive circuits, this MOSFET can be used to control medium-power motors. Its high drain-source voltage and current handling capabilities enable precise control of motor speed and direction, suitable for robotics, electric vehicles and industrial automation.
#### LED Lighting Systems
For LED lighting systems, the 2SJ387L-VB can be used for switching and dimming applications. Its high current handling capability and low on-resistance ensure efficient energy management in LED drivers, providing reliable and long-lasting lighting solutions for commercial and residential buildings.
#### Battery Management System
2SJ387L-VB is also suitable for battery management systems, such as battery protection circuits and charge management circuits. Its high voltage tolerance and low on-resistance enable it to handle high power demands in battery management systems, ensuring battery safety and stability.
### Summary
2SJ387L-VB P-Channel MOSFET has medium power capability, trench technology and high performance specifications, suitable for a wide range of applications from power management and motor drive circuits to LED lighting systems and battery management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
