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2SJ383-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ383-VB**
2SJ383-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for medium power applications.
**Model: 2SJ383-VB**
2SJ383-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain Current (ID)**: -38A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ383-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for medium-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle medium power and provide efficient power conversion and distribution.
2. **Motor Drive and Control System**: In applications that require medium-power motor drive and control, the high on-current and low conduction loss of 2SJ383-VB MOSFET can improve the efficiency and performance of the system. This is of great significance in areas such as electric vehicles, industrial machinery, and robots.
3. **Automotive Electronics**: In automotive electronic systems, MOSFETs need to be able to withstand the high voltage and high temperature environment of the automotive electrical system. The characteristics of 2SJ383-VB make it suitable for applications such as automotive ignition systems, battery management, power conversion, and drive control.
4. **LED Lighting**: Due to its low on-resistance and high on-current characteristics, 2SJ383-VB can be used in medium-power LED drivers and lighting control systems to provide stable power supply and efficient energy conversion.
By combining high on-current, low on-resistance and trench technology, 2SJ383-VB MOSFET is an ideal choice for medium-power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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