VBP16R02 Product details
Product introduction:
VBsemi's VBP16R02 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 30(±V) | 3.5V | 2A | 4000 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 4000
- Maximum drain current (ID): 2A
Domain and module applications:
- High-power power modules: Suitable for power switches and power control in high-power power modules, such as large industrial equipment, power electronic systems, etc.
- High-frequency power converters: In high-frequency power converters, they can be used as switching tubes to achieve efficient power conversion and power control, such as communication base stations, wireless chargers, etc.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as motor drivers and on-board chargers for electric vehicles.
- High-temperature environment applications: Because the TO247 package has good heat dissipation performance, it is suitable for industrial control systems, metallurgical equipment and other fields in high-temperature environments.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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