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VBP16R02 Product details

Product introduction:

Product introduction:

VBsemi's VBP16R02 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 30(±V) 3.5V 2A 4000 (mΩ) Plannar
Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 4000
- Maximum drain current (ID): 2A

Domain and module applications:

Examples of applicable fields and modules:

- High-power power modules: Suitable for power switches and power control in high-power power modules, such as large industrial equipment, power electronic systems, etc.
- High-frequency power converters: In high-frequency power converters, they can be used as switching tubes to achieve efficient power conversion and power control, such as communication base stations, wireless chargers, etc.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as motor drivers and on-board chargers for electric vehicles.
- High-temperature environment applications: Because the TO247 package has good heat dissipation performance, it is suitable for industrial control systems, metallurgical equipment and other fields in high-temperature environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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