中文
English
2SJ339-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi 2SJ339-VB is a high-performance P-channel MOSFET in TO220F package. It uses advanced Trench technology and has excellent on-resistance and reliability. This MOSFET is suitable for various applications requiring high power and high stability.
VBsemi 2SJ339-VB is a high-performance P-channel MOSFET in TO220F package. It uses advanced Trench technology and has excellent on-resistance and reliability. This MOSFET is suitable for various applications requiring high power and high stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | 60mΩ | 50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel |
### Detailed parameter description
- **Model**: 2SJ339-VB
- **Package**: TO220F
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
- **Model**: 2SJ339-VB
- **Package**: TO220F
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Drain current (ID)**: -30A
- **Technology**: Trench
Domain and module applications：
### Applications and Modules
1. **Power Management**
- 2SJ339-VB can be used in high-power switching power supplies, inverters, etc. Its low on-resistance and high drain current capability help improve the efficiency and stability of the system.
2. **Motor Drive**
- Suitable for high-power motor drive circuits, such as industrial motors, electric vehicle drives, etc. Its high drain current and low on-resistance can improve the efficiency and reliability of the motor system.
3. **Electric Vehicle**
- Suitable for power battery management systems (BMS) and motor drive devices in electric vehicles. Its high drain current and low power consumption help improve the range and performance of electric vehicles.
4. **Industrial Control**
- In industrial control systems that require high power and stability, 2SJ339-VB can be used in PLC, servo control systems, etc. to ensure stable operation of the system.
5. **Power Switch**
- Used in various applications that require high power switching, such as power modules, server power supplies, etc. Its high performance and reliability can meet the needs of demanding applications.
VBsemi 2SJ339-VB has high power handling capability and stability, providing reliable solutions in a variety of applications, and is an ideal choice for various high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
