Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
600V |
30（±V） |
3.5V |
1A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBP16R01
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 6500m次
- Maximum drain current (ID): 1A
- Manufacturing process: Plannar
-Package form: TO247
Domain and module applications：
Examples of applicable fields and modules:
1. High-voltage power module: Since VBP16R01 has a high drain-source voltage, it is suitable for various high-voltage power modules, such as high-voltage DC power supply, X-ray generator, etc.
2. Automotive electronics: In automotive electronic systems, this device can be used for power switch control of vehicle electronic modules, such as vehicle charging piles, vehicle entertainment systems, etc.
3. Industrial control system: VBP16R01 is suitable for motor drive, switch control and power conditioning modules in industrial control systems, providing reliable power control and protection.
4. Constant temperature and humidity equipment: In constant temperature and humidity equipment, this device can be used in power switch control modules, such as air conditioning systems, constant temperature and humidity boxes, etc., to achieve stable operation and efficient control of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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