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2SJ325-Z-E1-AZ-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**2SJ325-Z-E1-AZ-VB MOSFET** is a high-performance P-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device adopts advanced channel technology, has low on-resistance and high rated current capability, and is suitable for various medium and high power application scenarios.
**2SJ325-Z-E1-AZ-VB MOSFET** is a high-performance P-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device adopts advanced channel technology, has low on-resistance and high rated current capability, and is suitable for various medium and high power application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### 2. Detailed parameter description
- **Package form**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: 20V (±)
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID)**: -38A
- **Technology type**: Trench technology
Domain and module applications：
### 3. Application fields and module examples
**Application fields:**
1. **Power management**:
- 2SJ325-Z-E1-AZ-VB MOSFET can be used in medium and high power power management systems, such as industrial motor controllers, power inverters, etc.
2. **Automotive electronics**:
- In automotive electronics systems, this device is suitable for high power applications such as electric vehicle drive systems and charging piles.
3. **Industrial control**:
- Suitable for high power switches and control circuits in industrial automation control systems.
**Module application examples:**
1. **Electric vehicle charging piles**:
- Used in power control and conversion circuits in electric vehicle charging piles to provide efficient charging services.
2. **Power inverter**:
- In various power inverter modules, 2SJ325-Z-E1-AZ-VB MOSFET can achieve efficient power conversion.
3. **Industrial motor driver**:
- Applicable to various industrial motor drivers to control the start and stop and speed of the motor and improve industrial production efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
