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2SJ319STR-VB Product details
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### Product Introduction
**Model: 2SJ319STR-VB**
2SJ319STR-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combines high withstand voltage and low on-resistance, and is suitable for medium power and high voltage applications.
**Model: 2SJ319STR-VB**
2SJ319STR-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combines high withstand voltage and low on-resistance, and is suitable for medium power and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | 1392mΩ | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2.5V
- **On-Resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
- **Drain Current (ID)**: -3.6A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ319STR-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high withstand voltage and low on-resistance characteristics, this MOSFET is suitable for medium-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle medium power and provide efficient power conversion and distribution.
2. **Industrial Control System**: In industrial control systems that require high voltage resistance, 2SJ319STR-VB MOSFET can be used in various high-voltage circuits such as inverters, robot control systems, and factory automation equipment to improve system performance and stability.
3. **Electric Vehicle Charging Pile**: Electric vehicle charging piles require components that can withstand high voltage and high power. The characteristics of 2SJ319STR-VB make it suitable for power switches and power management modules in electric vehicle charging piles, providing efficient charging functions.
4. **Medical equipment**: In medical equipment, efficient power management devices are required to drive various electronic modules. The high withstand voltage characteristics of 2SJ319STR-VB make it suitable for power management modules in medical imaging equipment, diagnostic equipment and treatment equipment.
By combining high withstand voltage, low on-resistance and trench technology, 2SJ319STR-VB MOSFET is an ideal choice for high voltage and medium power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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