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2SJ319STL-E-VB Product details
Back to previous pageProduct introduction：
### 1. 2SJ319STL-E-VB Product Introduction
2SJ319STL-E-VB is a single P-channel MOSFET produced by VBsemi, manufactured using advanced Trench technology. The device is packaged in a TO252 housing, has moderate power handling capabilities and good heat dissipation, and is suitable for low to medium power applications.
2SJ319STL-E-VB is a single P-channel MOSFET produced by VBsemi, manufactured using advanced Trench technology. The device is packaged in a TO252 housing, has moderate power handling capabilities and good heat dissipation, and is suitable for low to medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | 1392mΩ | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### 2. 2SJ319STL-E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS=4.5V
- 1160mΩ @ VGS=10V
- **Drain current (ID)**: -3.6A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ @ VGS=4.5V
- 1160mΩ @ VGS=10V
- **Drain current (ID)**: -3.6A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
The moderate power characteristics of 2SJ319STL-E-VB make it suitable for a variety of fields and modules:
1. **Low power supply**:
Due to its moderate power handling capability, 2SJ319STL-E-VB can be used in low power power management modules, such as switching power supplies of electronic devices, to provide stable power conversion and management.
2. **Consumer electronics**:
In consumer electronics, 2SJ319STL-E-VB can be used in power management and control circuits in equipment such as TVs and audio systems to provide efficient energy conversion and stable power supply.
3. **LED light control**:
This MOSFET can be used as a power switch in the LED light control circuit to achieve the brightness adjustment and switch control functions of the LED light.
4. **Battery Management**:
In the battery management system, 2SJ319STL-E-VB can be used in the charge and discharge control circuit to achieve the control and management of the battery charge and discharge process.
Through the above application examples, it can be seen that 2SJ319STL-E-VB has important application value in the fields and modules with medium and low power, high efficiency energy conversion and high stability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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