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2SJ280S-VB Product details
Back to previous pageProduct introduction：
### 1. 2SJ280S-VB Product Introduction
2SJ280S-VB is a single P-channel MOSFET produced by VBsemi, manufactured using advanced Trench technology. The device is packaged in a TO263 housing, has good heat dissipation performance and high current handling capability, and is suitable for high power applications.
2SJ280S-VB is a single P-channel MOSFET produced by VBsemi, manufactured using advanced Trench technology. The device is packaged in a TO263 housing, has good heat dissipation performance and high current handling capability, and is suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -80A | 25mΩ | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### 2. 2SJ280S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Drain current (ID)**: -80A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Drain current (ID)**: -80A
- **Technology**: Trench
Domain and module applications：
### 3. Application fields and module examples
The high power characteristics of 2SJ280S-VB make it suitable for a variety of fields and modules:
1. **Power management module**:
Due to its high power handling capability, 2SJ280S-VB can be used in high-power power management modules such as server power supplies and industrial control power supplies to provide stable power conversion and efficient energy management.
2. **Electric vehicles**:
In the control system of electric vehicles, 2SJ280S-VB can be used in drivers and battery management systems to achieve efficient energy conversion and stable operation of electric vehicles.
3. **Industrial equipment**:
This MOSFET can be used in high-power switching circuits in industrial equipment, such as robots, CNC equipment, etc., to provide reliable power switching and control functions.
4. **Power Inverter**:
In renewable energy systems such as solar and wind power, 2SJ280S-VB can be used in inverters to achieve energy conversion from DC to AC and provide it to the power grid or electrical appliances.
Through the above application examples, it can be seen that 2SJ280S-VB has important application value in fields and modules with high power, high-efficiency energy conversion and high stability requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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