中文
English
2SJ263-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**Model: 2SJ263-VB**
2SJ263-VB is a single P-channel MOSFET in TO220F package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for medium power applications.
**Model: 2SJ263-VB**
2SJ263-VB is a single P-channel MOSFET in TO220F package with high performance and reliability. It adopts trench technology, combining the characteristics of high on-current and low on-resistance, suitable for medium power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -20A | 120mΩ | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO220F
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Drain Current (ID)**: -20A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ263-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for medium-power switching power supplies, DC-DC converters, and battery management systems. It can effectively handle medium power and provide efficient power conversion and distribution.
2. **Motor Drive and Control System**: In applications that require medium-power motor drive and control, the high on-current and low conduction loss of 2SJ263-VB MOSFET can improve the efficiency and performance of the system. This is of great significance in power tools, automotive electronics, and industrial automation equipment.
3. **LED Lighting**: In medium-power LED lighting systems, efficient power management devices are required to drive LEDs. The characteristics of 2SJ263-VB make it suitable for LED drivers and lighting control systems, providing stable power supply and efficient energy conversion.
4. **Automotive electronics**: In automotive electronic systems, MOSFETs need to be able to withstand the high voltage and high temperature environment of the automotive electrical system. The characteristics of 2SJ263-VB make it suitable for applications such as automotive ignition systems, battery management, power conversion and drive control.
By combining high on-current, low on-resistance and trench technology, 2SJ263-VB MOSFET is an ideal choice for medium power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
