中文
English
2SJ258-VB Product details
Back to previous pageProduct introduction：
### 2SJ258-VB MOSFET Product Overview
The 2SJ258-VB is a high performance single P-Channel MOSFET designed to meet the needs of modern electronic applications. Packaged in a TO263 package, this MOSFET provides robust and reliable operation with a maximum drain-source voltage (V_DS) of -60V and a gate-source voltage (V_GS) of ±20V. Utilizing advanced trench technology, it ensures efficient turn-on and minimal power loss, making it suitable for a variety of high current and high voltage applications.
The 2SJ258-VB is a high performance single P-Channel MOSFET designed to meet the needs of modern electronic applications. Packaged in a TO263 package, this MOSFET provides robust and reliable operation with a maximum drain-source voltage (V_DS) of -60V and a gate-source voltage (V_GS) of ±20V. Utilizing advanced trench technology, it ensures efficient turn-on and minimal power loss, making it suitable for a variety of high current and high voltage applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | 60mΩ | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
### 2SJ258-VB Detailed Specifications
- **Package**: TO263
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (V_DS)**: -60V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: -1.7V
- **Drain-Source On-Resistance (R_DS(ON))**:
- 60mΩ @ V_GS = 4.5V
- 48mΩ @ V_GS = 10V
- **Drain Current (I_D)**: -35A
- **Technology**: Channel
Domain and module applications：
### Application Examples
2SJ258-VB MOSFET is very suitable for various fields and modules with high efficiency and reliability. Here are some examples:
1. **Power Management**: Due to its ability to handle high voltage and current, it can be used in switching power supplies and voltage regulators in power management, ensuring high efficiency and stability.
2. **Power Tools**: In power tools, 2SJ258-VB can be used to drive motors efficiently, providing strong performance and reliability.
3. **LED Driver**: Due to its high current capacity and low on-resistance, it can be used for efficient driving of LED lamps, ensuring stable brightness and long life.
4. **Automotive Electronics**: 2SJ258-VB can be used in automotive electronics, such as body control modules (BCM) and battery management systems (BMS) of electric vehicles (EVs), ensuring efficient and reliable operation.
5. **Industrial Automation**: In industrial automation, it can be used in various control systems and drives to provide efficient control and performance.
These examples show the versatility and practicality of the 2SJ258-VB MOSFET in a variety of demanding and high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
