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2SJ189-VB Product details
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### 2SJ189-VB MOSFET Product Introduction
**Product Description: **
2SJ189-VB is a single-channel P-type MOSFET designed for efficient energy management in various electronic applications. This MOSFET is packaged in TO-252 and is optimized for low on-resistance and high current capability for power switching and control applications. Its trench technology ensures strong performance and reliability in harsh environments.
**Product Description: **
2SJ189-VB is a single-channel P-type MOSFET designed for efficient energy management in various electronic applications. This MOSFET is packaged in TO-252 and is optimized for low on-resistance and high current capability for power switching and control applications. Its trench technology ensures strong performance and reliability in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single channel P type
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID):** -38A
- **Technology:** Trench
Domain and module applications：
### Application Examples
**1. Power Management in Portable Devices: **
The 2SJ189-VB MOSFET can be used in battery-operated devices such as laptops, smartphones, and tablets. Its low on-resistance and high current capability enable efficient power delivery and extend battery life by reducing energy losses during the switching process.
**2. DC-DC Converter: **
This MOSFET can be used in DC-DC converter circuits that handle high currents and operate efficiently at low voltages. Its performance ensures stable power supply to processors, memory modules, and other key components in computers and communication equipment.
**3. Motor Control Applications: **
In motor control systems, the 2SJ189-VB can be used to drive and manage electric motors, such as drones, electric scooters, and industrial machinery. Its ability to handle high currents and provide precise control of motor operation improves performance and efficiency.
**4. Power Modules: **
2SJ189-VB MOSFETs are ideal for power modules, including those used in server farms, data centers, and other high-performance computing environments. Their reliability and efficiency ensure continuous power delivery and help keep these critical systems operating optimally.
These examples demonstrate the versatility and usefulness of the 2SJ189-VB MOSFET in a variety of areas, highlighting its importance in modern electronic design and power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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