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2SJ189-TL-VB Product details
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### 2SJ189-TL-VB MOSFET Product Introduction
#### Product Overview
2SJ189-TL-VB is a P-Channel MOSFET suitable for low to medium power applications. Using TO-252 package, this MOSFET is designed using trench technology and has high efficiency and stable performance. It is suitable for various applications that require low to medium power switching and amplification functions.
#### Product Overview
2SJ189-TL-VB is a P-Channel MOSFET suitable for low to medium power applications. Using TO-252 package, this MOSFET is designed using trench technology and has high efficiency and stable performance. It is suitable for various applications that require low to medium power switching and amplification functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
#### Detailed Specifications
- **Package**: TO-252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 46 mΩ @ VGS = 4.5V
- 33 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -38A
- **Technology**: Trench
- **Package**: TO-252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 46 mΩ @ VGS = 4.5V
- 33 mΩ @ VGS = 10V
- **Continuous Drain Current (ID)**: -38A
- **Technology**: Trench
Domain and module applications：
### Application Examples
#### Battery Protection Circuits
The 2SJ189-TL-VB MOSFET is suitable for battery protection circuits, especially in applications that require low power switching and high efficiency management. Its low on-resistance and high current handling capability make it ideal for protecting batteries from overcharge and over-discharge.
#### LED Driver Circuits
In LED driver circuits, this MOSFET can be used for switching and dimming applications. Its high current handling capability and low on-resistance ensure high efficiency management in LED drivers, providing reliable and long-lasting lighting solutions for a variety of applications.
#### Portable Electronics
For portable electronics such as smartphones and tablets, the 2SJ189-TL-VB can be used in power management circuits. Its high efficiency and low power switching capability help extend battery life and improve overall performance.
#### DC-DC Converter
In DC-DC converter circuits, this MOSFET can be used for voltage regulation and power conversion. Its high current handling capability and low on-resistance ensure efficient power conversion for a variety of electronic devices requiring different voltage levels.
### Summary
The 2SJ189-TL-VB P-Channel MOSFET features low to medium power capability, trench technology, and high performance specifications for a wide range of applications from battery protection and LED lighting to portable electronics and power management circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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