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2SJ188-TL-VB Product details
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### Product Introduction
**Model: 2SJ188-TL-VB**
2SJ188-TL-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combines the characteristics of high on-current and low on-resistance, and is suitable for medium and high power applications.
**Model: 2SJ188-TL-VB**
2SJ188-TL-VB is a single P-channel MOSFET in TO252 package with high performance and reliability. It adopts trench technology, combines the characteristics of high on-current and low on-resistance, and is suitable for medium and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Product Detailed Parameters
- **Package Type**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -30V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -1.7V
- **On-Resistance (RDS(ON))**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain Current (ID)**: -38A
- **Technology Type**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ188-TL-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some examples:
1. **Power Management Module**: Due to its high on-current and low on-resistance characteristics, this MOSFET is suitable for medium and high power switching power supplies, DC-DC converters and battery management systems. It can effectively handle medium and high power, providing efficient power conversion and distribution.
2. **Motor Drive and Control System**: In applications that require medium and high power motor drive and control, the high on-current and low conduction loss of 2SJ188-TL-VB MOSFET can improve the efficiency and performance of the system. This is of great significance in electric vehicles, industrial machinery and aerospace equipment.
3. **LED Lighting**: In LED lighting systems, efficient power management devices are required to drive LEDs. The characteristics of 2SJ188-TL-VB make it suitable for LED drivers and lighting control systems, providing stable power supply and efficient energy conversion.
4. **Industrial Control and Automation**: In medium and high power industrial control and automation systems, 2SJ188-TL-VB can be used in various high power circuits such as inverters, robot control systems and factory automation equipment to improve system performance and stability.
By combining high on-current, low on-resistance and trench technology, 2SJ188-TL-VB MOSFET is an ideal choice for medium and high power applications. Its reliability and performance make it widely used in multiple fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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