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2SJ183-VB Product details
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### 2SJ183-VB MOSFET Product Overview
2SJ183-VB is a high performance single P-Channel MOSFET designed for a wide range of applications. The device uses a TO251 package with a maximum drain-source voltage (V_DS) of -60V and a gate-source voltage (V_GS) of ±20V. Utilizing advanced channel technology, it provides efficient conduction and minimal power loss, suitable for a variety of high current and high voltage applications.
2SJ183-VB is a high performance single P-Channel MOSFET designed for a wide range of applications. The device uses a TO251 package with a maximum drain-source voltage (V_DS) of -60V and a gate-source voltage (V_GS) of ±20V. Utilizing advanced channel technology, it provides efficient conduction and minimal power loss, suitable for a variety of high current and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | 80mΩ | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel |
### 2SJ183-VB Detailed Specifications
- **Package**: TO251
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (V_DS)**: -60V
- **Gate-Source Voltage (V_GS)**: ±20V
- **Threshold Voltage (V_th)**: -1.7V
- **Drain-Source On-Resistance (R_DS(ON))**:
- 80mΩ @ V_GS = 4.5V
- 66mΩ @ V_GS = 10V
- **Drain Current (I_D)**: -20A
- **Technology**: Channel
Domain and module applications：
### Application Examples
The 2SJ183-VB MOSFET is highly efficient and reliable, making it suitable for a wide range of applications and modules. Here are some examples:
1. **Switching Power Supply**: Its high current capability and low on-resistance make it ideal for use in switching power supplies, ensuring efficient energy conversion with minimal losses.
2. **Motor Control**: In motor control applications, the 2SJ183-VB can be used to efficiently drive and control motors, especially in industrial automation and robotics, where precise control of motor speed and torque is critical.
3. **LED Lighting**: Due to its ability to handle high currents, it can be used in LED driver circuits to achieve efficient power management, ensuring stable and reliable operation of LED lighting systems.
4. **Battery Protection**: In battery management systems (BMS) for applications such as electric vehicles (EVs), this MOSFET can be used for efficient battery protection and management, ensuring safe and reliable operation.
5. **Audio Amplifier**: The 2SJ183-VB can be used in audio amplifiers to achieve efficient power management, ensure high-quality audio output and reduce distortion.
These examples demonstrate the versatility and usefulness of the 2SJ183-VB MOSFET in a variety of high-demand and high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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