中文
English
2SJ182L-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
**2SJ182L-VB MOSFET** is a high-performance P-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device adopts advanced channel technology, has low on-resistance and high rated current capability, and is suitable for application scenarios requiring high efficiency and reliability.
**2SJ182L-VB MOSFET** is a high-performance P-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device adopts advanced channel technology, has low on-resistance and high rated current capability, and is suitable for application scenarios requiring high efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | 80mΩ | 66mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P-Channel |
### 2. Detailed parameter description
- **Package form**: TO251
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: 20V (±)
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 4.5V
- 66mΩ @ VGS = 10V
- **Drain current (ID)**: -20A
- **Technology type**: Trench technology
Domain and module applications：
### 3. Application fields and module examples
**Application fields:**
1. **Power management system**:
- 2SJ182L-VB MOSFET can be used in power management systems, especially in switching power supplies and DC-DC converters. Its low on-resistance helps improve conversion efficiency.
2. **Motor control**:
- The device is suitable for motor drive applications, can withstand high currents and has low switching losses, and can be used in various motor controllers and servo systems.
3. **Load switch**:
- In load switch applications, 2SJ182L-VB can provide fast switching and low on-resistance, which is suitable for load management in industrial automation systems.
**Module application examples:**
1. **Solar inverter**:
- The device can be used in solar inverter modules to improve system efficiency through efficient power conversion.
2. **Electric Vehicle Charger**:
- In electric vehicle chargers, 2SJ182L-VB can be used to optimize current control, providing stable and efficient charging.
3. **Uninterruptible Power Supply (UPS)**:
- In UPS systems, this MOSFET enables fast switching of power to ensure continuous operation of equipment and data security.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
