VBP165R43SE Product details
Product introduction:
VBsemi's VBP165R43SE model is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Deep-Trench technology, packaged in TO247, and is suitable for various high-voltage application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 43A | 58(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 58
- Drain current (ID): 43A
- Technology: SJ_Deep-Trench
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
1. Power transmission and distribution equipment: Due to its high drain-source voltage and large drain current, it can be used as switching devices in power transmission and distribution equipment, such as high-voltage switches and circuit breakers.
2. Industrial motor drive: It can be used as a key component in industrial motor control systems to achieve efficient motor control and regulation.
3. Solar inverter: Due to its high voltage tolerance and low drain-source resistance, it is suitable for the design of solar inverter to realize the conversion and utilization of solar energy.
4. Automotive electronic systems: It can be used for power management and drivers in automotive electronic systems, such as power controllers and battery management systems for electric vehicles.
These are just some examples, actual application depends on specific design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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