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2SJ132-Z-T1-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SJ132-Z-T1-VB is a single channel P-type MOSFET produced by VBsemi in TO252 package. The device has low on-resistance and high current handling capability, suitable for various power management and switching applications.
2SJ132-Z-T1-VB is a single channel P-type MOSFET produced by VBsemi in TO252 package. The device has low on-resistance and high current handling capability, suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | 46mΩ | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Model**: 2SJ132-Z-T1-VB
- **Package**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 46mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Drain current (ID)**: -38A
- **Technology**: Trench (trench technology)
Domain and module applications：
### Applications and Module Examples
1. **Power Management Modules**
- 2SJ132-Z-T1-VB can be used in switching power modules, especially where efficient current handling and low conduction losses are required. Its low RDS(ON) and high ID make it well suited for such high-power applications.
2. **Motor Drive**
- In motor drive circuits, the high current capability and reliable package of this MOSFET make it suitable for driving high-current motors, helping to improve system stability and efficiency.
3. **Battery Management System**
- In battery management systems such as lithium battery pack management, 2SJ132-Z-T1-VB can be used as a switching element to control the charging and discharging process, ensuring the safety and life of the battery.
4. **Automotive Electronics**
- The device has a wide range of applications in automotive electronics, such as electronic control units (ECUs) and power distribution modules, and can withstand the harsh conditions in the automotive environment.
Through these application examples, it can be seen that 2SJ132-Z-T1-VB has broad application prospects in fields requiring high efficiency, low loss and high reliability.
1. **Power Management Modules**
- 2SJ132-Z-T1-VB can be used in switching power modules, especially where efficient current handling and low conduction losses are required. Its low RDS(ON) and high ID make it well suited for such high-power applications.
2. **Motor Drive**
- In motor drive circuits, the high current capability and reliable package of this MOSFET make it suitable for driving high-current motors, helping to improve system stability and efficiency.
3. **Battery Management System**
- In battery management systems such as lithium battery pack management, 2SJ132-Z-T1-VB can be used as a switching element to control the charging and discharging process, ensuring the safety and life of the battery.
4. **Automotive Electronics**
- The device has a wide range of applications in automotive electronics, such as electronic control units (ECUs) and power distribution modules, and can withstand the harsh conditions in the automotive environment.
Through these application examples, it can be seen that 2SJ132-Z-T1-VB has broad application prospects in fields requiring high efficiency, low loss and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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