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2SJ128-Z-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2SJ128-Z-VB** is a single P-channel MOSFET produced by VBsemi and packaged in TO252. This MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 280mΩ at a gate-source voltage of 4.5V and 250mΩ at 10V, and the maximum drain current (ID) is -8.8A. It uses Trench technology and is suitable for medium-power applications.
**2SJ128-Z-VB** is a single P-channel MOSFET produced by VBsemi and packaged in TO252. This MOSFET has a drain-source voltage (VDS) of -100V and a gate-source voltage (VGS) of 20V (±). Its turn-on threshold voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 280mΩ at a gate-source voltage of 4.5V and 250mΩ at 10V, and the maximum drain current (ID) is -8.8A. It uses Trench technology and is suitable for medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | 280mΩ | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO252 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate-source voltage (VGS) | 20V (±) |
| Turn-on threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 280mΩ@VGS=4.5V |
| | 250mΩ@VGS=10V |
| Maximum drain current (ID) | -8.8A |
| Technology | Trench |
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO252 |
| Configuration| Single P-channel|
| Drain-source voltage (VDS) | -100V |
| Gate-source voltage (VGS) | 20V (±) |
| Turn-on threshold voltage (Vth) | -2V |
| On-resistance (RDS(ON)) | 280mΩ@VGS=4.5V |
| | 250mΩ@VGS=10V |
| Maximum drain current (ID) | -8.8A |
| Technology | Trench |
Domain and module applications：
### Applications and Modules
1. **Power Management**: 2SJ128-Z-VB MOSFET is suitable for power management applications such as power adapters, chargers, etc. Its high drain-source voltage and stable performance enable it to withstand higher loads.
2. **Power Amplifier**: In audio power amplifiers, this MOSFET can be used as a switching element at the output stage to control the amplification and output of signals.
3. **Power Tools**: In power tools, 2SJ128-Z-VB can be used to control the start and stop of the motor and speed regulation to ensure the stability and safety of the tool.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
