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2SJ128-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
2SJ128-VB is a single P-channel MOSFET in TO252 package, provided by VBsemi. The device has a drain-source voltage of -100V and is suitable for medium power applications. It adopts Trench technology to provide reliable performance and stability.
2SJ128-VB is a single P-channel MOSFET in TO252 package, provided by VBsemi. The device has a drain-source voltage of -100V and is suitable for medium power applications. It adopts Trench technology to provide reliable performance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | 280mΩ | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P-Channel |
### Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=4.5V; 250mΩ @ VGS=10V
- **Drain current (ID)**: -8.8A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 280mΩ @ VGS=4.5V; 250mΩ @ VGS=10V
- **Drain current (ID)**: -8.8A
- **Technology**: Trench
Domain and module applications：
### Application Fields and Modules
2SJ128-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some typical application examples:
1. **Power Management**:
Due to its high drain-source voltage, this device is suitable for power management applications such as switching power supplies, inverters, etc.
2. **Battery Management**:
In battery management systems that require load disconnection and connection, 2SJ128-VB can be used as a switching device in battery protection circuits.
3. **Power Amplifier**:
This device is suitable for switching devices in power amplifier circuits to help amplify and control signals.
4. **LED Driver**:
In LED lighting systems, 2SJ128-VB can be used as a switching device in LED driver circuits to help control and adjust LED lights.
5. **Electric Vehicle Charging**:
This device is suitable for use as a switch device in electric vehicle charging piles to help control and manage electric vehicle charging.
The above application examples demonstrate the wide range of applications and versatility of 2SJ128-VB, making it an ideal choice for a variety of electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
