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2R803GH-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 2R803GH-VB is a single N-channel MOSFET with low on-resistance and high drain current. The device is suitable for low voltage applications such as power management, inverters and motor drives. The 2R803GH-VB adopts TO252 package and is suitable for circuit designs that require higher power handling capabilities.
VBsemi's 2R803GH-VB is a single N-channel MOSFET with low on-resistance and high drain current. The device is suitable for low voltage applications such as power management, inverters and motor drives. The 2R803GH-VB adopts TO252 package and is suitable for circuit designs that require higher power handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 100A | 3mΩ | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2R803GH-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: 2R803GH-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3mΩ @ VGS = 4.5V, 2mΩ @ VGS = 10V
- **Drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management**:
- 2R803GH-VB can be used in low voltage power management circuits such as switching power supplies and inverters. Its low on-resistance and high drain current ensure high efficiency and stability of the circuit.
2. **Inverter**:
- In the inverter circuit, this MOSFET can be used to control the conversion and regulation of electric energy. Its low on-resistance and high drain current ensure high efficiency and reliability of the inverter circuit.
3. **Motor Drive**:
- As a motor driver, 2R803GH-VB can be used to control the start and stop and speed of the motor. Its low on-resistance and high drain current ensure stability and performance of the motor driver.
In summary, VBsemi's 2R803GH-VB MOSFET is suitable for various low-voltage applications, especially in power management, inverters and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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