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2N80L-TN3-R-VB Product details
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### VBsemi 2N80L-TN3-R-VB MOSFET Product Overview
VBsemi 2N80L-TN3-R-VB is an N-Channel MOSFET in TO252 package for medium power applications. The device has stable performance and reliability, suitable for a variety of electronic devices and systems.
VBsemi 2N80L-TN3-R-VB is an N-Channel MOSFET in TO252 package for medium power applications. The device has stable performance and reliability, suitable for a variety of electronic devices and systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed Specifications
- **Package**: TO252
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 2600mΩ @ VGS = 10V
- **ID (continuous drain current)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO252
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (drain-source resistance)**: 2600mΩ @ VGS = 10V
- **ID (continuous drain current)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Application Examples
1. **Power Switch**:
2N80L-TN3-R-VB can be used as a power switch to control the on and off of medium power supplies. Its high drain-source voltage and moderate drain-source resistance make it an ideal choice for power switches.
2. **Inverter**:
This MOSFET can be used in inverter circuits to convert DC power to AC power. Its stable performance and high drain-source voltage make it suitable for inverter applications.
3. **Lighting Control**:
In lighting control, 2N80L-TN3-R-VB can be used to control the on and off and brightness of lights. Its high voltage and moderate current capability make it an ideal choice for lighting control.
4. **Electric Vehicle Charger**:
Due to its high drain-source voltage and moderate current capability, this device can be used in switching and control circuits in electric vehicle chargers.
In general, the VBsemi 2N80L-TN3-R-VB MOSFET can play a role in power switching, inverters, lighting control, and electric vehicle chargers, providing high-efficiency solutions for a variety of mid-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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