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2N80L-TM3-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
**2N80L-TM3-R-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO251. This MOSFET has a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses SJ_Multi-EPI technology and is suitable for medium-power applications.
**2N80L-TM3-R-VB** is a single N-channel MOSFET produced by VBsemi and packaged in TO251. This MOSFET has a drain-source voltage (VDS) of 800V and a gate-source voltage (VGS) of 30V (±). Its turn-on threshold voltage (Vth) is 3.5V, the on-resistance (RDS(ON)) is 2600mΩ at a gate-source voltage of 10V, and the maximum drain current (ID) is 2A. It uses SJ_Multi-EPI technology and is suitable for medium-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### Detailed parameter description
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2600mΩ@VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology| SJ_Multi-EPI |
| Parameters| Specifications|
|--------------------|------------------------|
| Package type| TO251 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 800V |
| Gate-source voltage (VGS) | 30V (±) |
| Turn-on threshold voltage (Vth) | 3.5V |
| On-resistance (RDS(ON)) | 2600mΩ@VGS=10V |
| Maximum drain current (ID) | 2A |
| Technology| SJ_Multi-EPI |
Domain and module applications：
### Applications and modules
1. **Power switch**: 2N80L-TM3-R-VB MOSFET is suitable for power switch applications, such as power adapters, power management units, etc. Its high drain-source voltage and stable performance enable it to withstand higher voltage and current loads.
2. **Electric vehicle charging pile**: In electric vehicle charging piles, this MOSFET can be used as a switching element to control the on and off of the current to ensure the stability and safety of the charging process.
3. **Induction heater**: In the induction heater circuit, 2N80L-TM3-R-VB can be used to control the working state of the induction coil and realize the power regulation of the heater. Its high drain-source voltage and low on-resistance characteristics enable it to work stably in high-power heating scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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