中文
English
2N70L-TN3-R-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
VBsemi's 2N70L-TN3-R-VB is a single N-channel MOSFET with high drain-source voltage and moderate on-resistance. The device is suitable for medium voltage applications such as power management, inverters and motor drives. The 2N70L-TN3-R-VB adopts TO252 package, which is suitable for circuit designs requiring higher power handling capabilities.
VBsemi's 2N70L-TN3-R-VB is a single N-channel MOSFET with high drain-source voltage and moderate on-resistance. The device is suitable for medium voltage applications such as power management, inverters and motor drives. The 2N70L-TN3-R-VB adopts TO252 package, which is suitable for circuit designs requiring higher power handling capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N70L-TN3-R-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2400mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
1. **Power Management**:
- 2N70L-TN3-R-VB can be used in medium voltage power management circuits, such as switching power supplies and inverters. Its high drain-source voltage and moderate on-resistance ensure high efficiency and stability of the circuit.
2. **Inverter**:
- In the inverter circuit, this MOSFET can be used to control the conversion and regulation of electric energy. Its high drain-source voltage and moderate on-resistance ensure high efficiency and reliability of the inverter circuit.
3. **Motor Drive**:
- As a motor driver, 2N70L-TN3-R-VB can be used to control the start and stop and speed of the motor. Its high drain-source voltage and moderate on-resistance ensure stability and performance of the motor driver.
In summary, VBsemi's 2N70L-TN3-R-VB MOSFET is suitable for various medium-voltage applications, especially in power management, inverters and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
