Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
60V |
20（±V） |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### Detailed parameter description
- **Model**: 2N7002P-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS = 4.5V, 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management**: Due to its low on-resistance and low threshold voltage, the 2N7002P-VB can be used in low-power power management circuits, such as switching power supplies in small power adapters and portable devices.
2. **Signal Switch**: In the circuit, this MOSFET can be used as a signal switch to switch signal lines. Its low drain-source voltage and low on-resistance ensure the stability and reliability of signal transmission.
3. **Driver**: The 2N7002P-VB can be used as part of a driver, such as a motor driver and LED driver. Its low drain-source voltage and low on-resistance help improve drive efficiency and performance.
4. **Analog Switch**: In analog circuits, this MOSFET can be used as an analog switch to control the on and off of analog signals. Its low threshold voltage and low drain-source voltage make it an ideal choice for analog switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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