Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
60V |
20（±V） |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### Detailed Specifications
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (drain-source resistance)**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID (continuous drain current)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Application Examples
1. **Signal Switch**:
2N7002MTF-NL-VB can be used as a signal switch to control low voltage and low current signals. Its low drain-source resistance and high threshold voltage make it an ideal choice for signal switches.
2. **Voltage Level Shifter**:
This MOSFET can be used as a voltage level shifter to convert low voltage to high voltage. Its stable performance and low threshold voltage help to achieve the function of voltage level shifting.
3. **Circuit Protection**:
In circuit protection, 2N7002MTF-NL-VB can be used for overload and short circuit protection. Its high threshold voltage and low drain-source resistance help to protect the circuit from damage.
4. **Sensor Interface**:
Due to its low drain-source resistance and high threshold voltage, this device can be used in sensor interface to process sensor output signals.
In general, VBsemi 2N7002MTF-NL-VB MOSFET can play a role in signal switching, voltage level shifter, circuit protection and sensor interface, providing high-efficiency solutions for various low-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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