Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
60V |
20（±V） |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Application Fields and Modules
2N7002LLG-AE2-R-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some typical application examples:
1. **Circuit Protection**:
Due to its single N-channel configuration, this device is suitable for circuit protection applications such as overvoltage protection, overcurrent protection, etc.
2. **Signal Switch**:
In low-power signal switches, 2N7002LLG-AE2-R-VB can be used as a signal switch device to help achieve signal transmission and control.
3. **Battery Management**:
In battery management systems, this MOSFET can be used as a switch device in charge and discharge control circuits to achieve effective management of batteries.
4. **LED Driver**:
This device is suitable for switching devices in LED driver circuits to help provide stable LED light output.
5. **Sensor Interface**:
2N7002LLG-AE2-R-VB can be used as a switch device in the sensor interface circuit to achieve the transmission and control of sensor data.
The above application examples demonstrate the versatility and applicability of 2N7002LLG-AE2-R-VB, making it an ideal choice for a variety of low-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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