VBP165R32SE Product details
Product introduction:
VBsemi's VBP165R32SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 32A. It adopts SJ_Deep-Trench technology and is packaged as TO247.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 30(±V) | 3.5V | 32A | 89(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 89
- Drain current (ID): 32A
- Technology: SJ_Deep-Trench
-Package:TO247
Domain and module applications:
1. Industrial power system: Because VBP165R32SE has high drain-source voltage and drain current, it is suitable for power switching modules in industrial power systems, such as industrial inverters, UPS systems, etc.
2. Solar inverter: Its low on-resistance and high withstand voltage characteristics make it suitable for solar inverter modules and can be used for power conversion and control in solar power generation systems.
3. Electric vehicle drive system: TO247 package is suitable for high power density applications, and VBP165R32SE can be used in the power switch module of electric vehicle drive system, providing high efficiency and reliability.
Technical support:
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