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VBP165R32SE Product details

Product introduction:

Product introduction:
VBsemi's VBP165R32SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 32A. It adopts SJ_Deep-Trench technology and is packaged as TO247.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 30(±V) 3.5V 32A 89(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 89
- Drain current (ID): 32A
- Technology: SJ_Deep-Trench
-Package:TO247

Domain and module applications:

Examples of application areas and modules:
1. Industrial power system: Because VBP165R32SE has high drain-source voltage and drain current, it is suitable for power switching modules in industrial power systems, such as industrial inverters, UPS systems, etc.
2. Solar inverter: Its low on-resistance and high withstand voltage characteristics make it suitable for solar inverter modules and can be used for power conversion and control in solar power generation systems.
3. Electric vehicle drive system: TO247 package is suitable for high power density applications, and VBP165R32SE can be used in the power switch module of electric vehicle drive system, providing high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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