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2N7002K-7-F-VB Product details
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### Product Introduction Details
**VBsemi 2N7002K-7-F-VB SOT23-3** is a high-performance single N-channel MOSFET manufactured using trench technology. The device has low drain resistance and low threshold voltage, suitable for low voltage switching and power management applications.
**VBsemi 2N7002K-7-F-VB SOT23-3** is a high-performance single N-channel MOSFET manufactured using trench technology. The device has low drain resistance and low threshold voltage, suitable for low voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | 3100mΩ | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel |
### Detailed parameter description
- **Model**: 2N7002K-7-F-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Model**: 2N7002K-7-F-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Applicable fields and modules
**1. Low power switch**
2N7002K-7-F-VB SOT23-3 MOSFET is suitable for low power switching circuits, such as power switches and signal switches. Its low on-resistance and low threshold voltage make it an ideal choice for low power applications.
**2. Power management**
In some low power power management modules, this MOSFET can be used in DC-DC converters and switching power supplies. Its low drain resistance helps improve the efficiency and performance of the module.
**3. Electronic devices**
2N7002K-7-F-VB MOSFET can be used in low voltage switching circuits in electronic devices, such as mobile phones, tablets and portable electronic devices. Its small size and low power characteristics make it suitable for integration into small electronic devices.
**4. LED driver**
In the LED driver circuit, this MOSFET can be used as a switching device to control the on and off state of the LED. Its low power characteristics help reduce power consumption and extend the life of LED lamps.
**5. Analog circuits**
In some analog circuits that require control signals, 2N7002K-7-F-VB can be used as a switching device to control the on and off of the signal. Its low on-resistance and low threshold voltage make it suitable for these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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