Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N-Channel |
60V |
20（±V） |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### Detailed parameter description
- **Model**: 2N7002K-13-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
### Applications and Module Examples
1. **Power Management**:
- In low-voltage and low-power power management circuits, 2N7002K-13-VB can be used as a power switch or load switch. Its low drain-source voltage and moderate on-resistance ensure high efficiency and stability of the circuit.
2. **Signal Switch**:
- As a signal switch, this MOSFET can be used to control the transmission and shielding of signals in the circuit. Its low drain-source voltage and moderate on-resistance ensure the stability and reliability of signal transmission.
3. **Driver**:
- In the driver circuit, 2N7002K-13-VB can be used to control the switch of a low-power driver. Its small size and high performance make it an ideal choice in the driver circuit.
In summary, VBsemi's 2N7002K-13-VB MOSFET is suitable for various low-voltage and low-power applications, especially in power management, signal switching and driver fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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