Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO247 |
Single-N |
650V |
30（±V） |
3.5V |
25A |
|
|
115(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBP165R25SE
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 115
- Maximum drain current (ID): 25A
- Technology: SJ_Deep-Trench
-Package:TO247
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial high-voltage power supply: VBP165R25SE’s high withstand voltage and high current capabilities make it suitable for designing industrial high-voltage power modules to ensure stable and reliable power output.
2. High-power motor driver: In motor drivers that need to handle high-power current, it can be used as a power switching device to achieve high efficiency and precise control of the motor.
3. Automotive electronic systems: In automotive electronic systems, it can be used to design high-voltage and high-current power management modules and drivers to provide reliable power output.
4. Power transmission and converter: suitable for power conversion and control circuits in power transmission and converter systems, providing high efficiency and reliability energy conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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