Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N-Channel |
60V |
20(±V) |
1.7V |
0.3A |
|
3100mΩ |
2800mΩ |
|
### Detailed Specifications
- **Package**: SOT23-3
- **Configuration**: Single N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON) (drain-source resistance)**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **ID (continuous drain current)**: 0.3A
- **Technology**: Trench
Domain and module applications:
### Application Examples
1. **Logic Level Converter**:
2N7002BK-VB can be used as a logic level converter to convert high level to low level. Its high threshold voltage and low drain-source resistance help to achieve the conversion of logic level.
2. **Analog Switch**:
This MOSFET can be used as an analog switch to control signals in analog circuits. Its stable performance and low drain-source resistance make it an ideal choice for analog switches.
3. **Power Management**:
In power management, 2N7002BK-VB can be used for power switching and control. Its stable performance and high threshold voltage help to improve the efficiency and stability of power management.
4. **Circuit Protection**:
Due to its high threshold voltage and low drain-source resistance, this device can be used for circuit protection to protect circuits from damage caused by overload and short circuit.
In general, VBsemi 2N7002BK-VB MOSFET can play a role in logic level converters, analog switches, power management and circuit protection, providing high-efficiency solutions for various low-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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